IISc Unlocks GaN Gate Secrets, Paving Way For Robust High-Power Electronics

Researchers at the Indian Institute of Science (IISc) have achieved a significant breakthrough in gallium nitride (GaN) power transistor technology. Their work addresses longstanding challenges in gate control, enhancing reliability for critical applications like electric vehicles and data centres.GaN transistors offer remarkable advantages over traditional silicon-based devices. They drastically
Researchers at the Indian Institute of Science (IISc) have achieved a significant breakthrough in gallium nitride (GaN) power transistor technology. Their work addresses longstanding challenges in gate control, enhancing reliability for critical applications like electric vehicles and data centres.GaN transistors offer remarkable advantages over traditional silicon-based devices. They drastically
Go to Source