DRDO Develops Indigenous Silicon Carbide Wafers And GaN HEMT Based MMIC Tech

Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) upto 150W & Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band frequencies. GaN/SiC technology is a
Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) upto 150W & Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band frequencies. GaN/SiC technology is a
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